Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration

Tzu Chieh Chou; Shin Yi Huang; Pin Jun Chen; Han Wen Hu; Demin Liu; Chih Wei Chang; Tzu Hsuan Ni; Chao Jung Chen; Yu Min Lin; Tao Chih Chang; Kuan-Neng Chen

doi:10.1109/TCPMT.2020.3037365

Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration

Tzu Chieh Chou, Shin Yi Huang, Pin Jun Chen, Han Wen Hu, Demin Liu, Chih Wei Chang, Tzu Hsuan Ni, Chao Jung Chen, Yu Min Lin, Tao Chih Chang, Kuan-Neng Chen

Center for Semiconductor Technology Research

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

In this article, low temperature Cu-Cu bonding with Ag passivation layer was accomplished at 180 °C for 3 min without a post-annealing process. The Ag passivation layer effectively prevents Cu from oxidation and assists Cu diffusion to realize low temperature bonding. Small grain size of Ag passivation layer controlled by sputtering working pressure is observed to improve bonding quality. Different plasma treatment parameters and bonding conditions were executed to evaluate bonding quality. The diffusion behavior of passivation bonding is investigated and corresponding mechanism is discussed as well. In addition, reliability assessments, including thermal cycling, high temperature storage, and un-biased highly accelerated stress test, indicate excellent stability of this bonding structure, showing the potential for low temperature bonding technology in three-dimensional (3D) integration applications.

Original language	English
Article number	9256336
Pages (from-to)	36-42
Number of pages	7
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/TCPMT.2020.3037365
State	Published - Jan 2021

Keywords

3-D integration
Cu bonding
interconnect

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Chou, T. C., Huang, S. Y., Chen, P. J., Hu, H. W., Liu, D., Chang, C. W., Ni, T. H., Chen, C. J., Lin, Y. M., Chang, T. C., & Chen, K.-N. (2021). Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration. IEEE Transactions on Components, Packaging and Manufacturing Technology, 11(1), 36-42. Article 9256336. https://doi.org/10.1109/TCPMT.2020.3037365

@article{aedfefe524d84a27a67304489224498f,

title = "Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration",

abstract = "In this article, low temperature Cu-Cu bonding with Ag passivation layer was accomplished at 180 °C for 3 min without a post-annealing process. The Ag passivation layer effectively prevents Cu from oxidation and assists Cu diffusion to realize low temperature bonding. Small grain size of Ag passivation layer controlled by sputtering working pressure is observed to improve bonding quality. Different plasma treatment parameters and bonding conditions were executed to evaluate bonding quality. The diffusion behavior of passivation bonding is investigated and corresponding mechanism is discussed as well. In addition, reliability assessments, including thermal cycling, high temperature storage, and un-biased highly accelerated stress test, indicate excellent stability of this bonding structure, showing the potential for low temperature bonding technology in three-dimensional (3D) integration applications.",

keywords = "3-D integration, Cu bonding, interconnect",

author = "Chou, {Tzu Chieh} and Huang, {Shin Yi} and Chen, {Pin Jun} and Hu, {Han Wen} and Demin Liu and Chang, {Chih Wei} and Ni, {Tzu Hsuan} and Chen, {Chao Jung} and Lin, {Yu Min} and Chang, {Tao Chih} and Kuan-Neng Chen",

year = "2021",

month = jan,

doi = "10.1109/TCPMT.2020.3037365",

language = "English",

volume = "11",

pages = "36--42",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

Chou, TC, Huang, SY, Chen, PJ, Hu, HW, Liu, D, Chang, CW, Ni, TH, Chen, CJ, Lin, YM, Chang, TC & Chen, K-N 2021, 'Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration', IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 11, no. 1, 9256336, pp. 36-42. https://doi.org/10.1109/TCPMT.2020.3037365

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T1 - Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration

AU - Chou, Tzu Chieh

AU - Huang, Shin Yi

AU - Chen, Pin Jun

AU - Hu, Han Wen

AU - Liu, Demin

AU - Chang, Chih Wei

AU - Ni, Tzu Hsuan

AU - Chen, Chao Jung

AU - Lin, Yu Min

AU - Chang, Tao Chih

AU - Chen, Kuan-Neng

PY - 2021/1

Y1 - 2021/1

N2 - In this article, low temperature Cu-Cu bonding with Ag passivation layer was accomplished at 180 °C for 3 min without a post-annealing process. The Ag passivation layer effectively prevents Cu from oxidation and assists Cu diffusion to realize low temperature bonding. Small grain size of Ag passivation layer controlled by sputtering working pressure is observed to improve bonding quality. Different plasma treatment parameters and bonding conditions were executed to evaluate bonding quality. The diffusion behavior of passivation bonding is investigated and corresponding mechanism is discussed as well. In addition, reliability assessments, including thermal cycling, high temperature storage, and un-biased highly accelerated stress test, indicate excellent stability of this bonding structure, showing the potential for low temperature bonding technology in three-dimensional (3D) integration applications.

AB - In this article, low temperature Cu-Cu bonding with Ag passivation layer was accomplished at 180 °C for 3 min without a post-annealing process. The Ag passivation layer effectively prevents Cu from oxidation and assists Cu diffusion to realize low temperature bonding. Small grain size of Ag passivation layer controlled by sputtering working pressure is observed to improve bonding quality. Different plasma treatment parameters and bonding conditions were executed to evaluate bonding quality. The diffusion behavior of passivation bonding is investigated and corresponding mechanism is discussed as well. In addition, reliability assessments, including thermal cycling, high temperature storage, and un-biased highly accelerated stress test, indicate excellent stability of this bonding structure, showing the potential for low temperature bonding technology in three-dimensional (3D) integration applications.

KW - 3-D integration

KW - Cu bonding

KW - interconnect

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ER -

Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3-D Integration

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