Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering

Shr Nan Bai*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


The properties of transparent conductive ZnO:Al thin films grown by R.F. magnetron sputtering method are investigated. The working pressure (argon gas) is changed from 2.5 to 40.0 mTorr to study its influence on the characteristics of ZnO:Al thin films. The ZnO:Al thin films have better texture due to the increase in the surface mobility, which resulted from the increase in the mean free path of sputtering gas under lower working pressure. The microstructure of ZnO:Al films is found to be affected obviously by changing the working pressure. It is shown that the grain size of ZnO:Al thin films decreases with the increase of working pressure. The X-ray diffraction patterns indicate that the poor crystallized structure of ZnO:Al films is obtained at higher working pressure. Except 40 mTorr, the highly (002)-oriented ZnO:Al thin films can be found at the measured range of working pressure. Moreover, the growth rate of the films decreases from 1.5 to 0.5 nm/min as the working pressure increases from 2.5 to 40.0 mTorr. The results of optical transmittance measurement of ZnO:Al thin films reveal a high transmittance (>80%) in visible region and exhibit a sharp absorption edge at wavelength about 350 nm.

Original languageEnglish
Pages (from-to)253-256
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Issue number3
StatePublished - 1 Jan 2009


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