Electric field simulation of the TBC-OTFTs with meshed source electrodes

Hsiao-Wen Zan*, Kuang Ming Wang, Kuo Hsi Yen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

It was found that Fowler-Nordheim tunneling effect is the dominant mechanism for vertical channel organic thin film transistors with ultra short channel. In order to improve the device saturation characteristics and to lower down the leakage current, a new device structure with meshed source electrodes was introduced. By using Silvaco TCAD simulation, obvious fringing field effect was observed when the meshed source structure was used. The fringing field would suppress Fowler-Nordheim tunneling effect and improve the gate control ability. As a result, lower leakage current and better saturation characteristics could be obtained.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages505-508
Number of pages4
StatePublished - Jul 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
Country/TerritoryTaiwan
CityTaipei
Period3/07/076/07/07

Fingerprint

Dive into the research topics of 'Electric field simulation of the TBC-OTFTs with meshed source electrodes'. Together they form a unique fingerprint.

Cite this