Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

Yu Heng Liu; Cheng Min Jiang; Wei Chun Chen; Ta-Hui Wang; Wen Jer Tsai; Tao Cheng Lu; Kuang Chao Chen; Chih Yuan Lu

doi:10.1109/LED.2016.2633545

Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

Yu Heng Liu^*, Cheng Min Jiang, Wei Chun Chen, Ta-Hui Wang, Wen Jer Tsai, Tao Cheng Lu, Kuang Chao Chen, Chih Yuan Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (Δ V_t) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used to monitor trapped charge lateral migration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.

Original language	English
Article number	7762773
Pages (from-to)	48-51
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	1
DOIs	https://doi.org/10.1109/LED.2016.2633545
State	Published - 1 Jan 2017

Keywords

Electron lateral migration
SONOS
thermally assisted tunneling

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title = "Electric field induced nitride trapped charge lateral migration in a SONOS flash memory",

abstract = "We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (Δ Vt) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used to monitor trapped charge lateral migration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.",

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AU - Liu, Yu Heng

AU - Jiang, Cheng Min

AU - Chen, Wei Chun

AU - Wang, Ta-Hui

AU - Tsai, Wen Jer

AU - Lu, Tao Cheng

AU - Chen, Kuang Chao

AU - Lu, Chih Yuan

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (Δ Vt) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used to monitor trapped charge lateral migration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.

AB - We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift (Δ Vt) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used to monitor trapped charge lateral migration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.

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KW - thermally assisted tunneling

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Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

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Keywords

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