Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

Chau Neng Wu; Ming-Dou Ker; T. L. Yu; S. T. Lin; K. L. Young; K. Y. Chiu

doi:10.1109/VTSA.1997.614723

Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

Chau Neng Wu^*, Ming-Dou Ker, T. L. Yu, S. T. Lin, K. L. Young, K. Y. Chiu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.

Original language	English
Pages	40-44
Number of pages	5
DOIs	https://doi.org/10.1109/VTSA.1997.614723
State	Published - 1997
Event	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, China
Period	3/06/97 → 5/06/97

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10.1109/VTSA.1997.614723

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title = "Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology",

abstract = "A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.",

author = "Wu, {Chau Neng} and Ming-Dou Ker and Yu, {T. L.} and Lin, {S. T.} and Young, {K. L.} and Chiu, {K. Y.}",

year = "1997",

doi = "10.1109/VTSA.1997.614723",

language = "English",

pages = "40--44",

note = "Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 03-06-1997 Through 05-06-1997",

}

Wu, CN, Ker, M-D, Yu, TL, Lin, ST, Young, KL & Chiu, KY 1997, 'Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology', Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, 3/06/97 - 5/06/97 pp. 40-44. https://doi.org/10.1109/VTSA.1997.614723

TY - CONF

T1 - Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

AU - Wu, Chau Neng

AU - Ker, Ming-Dou

AU - Yu, T. L.

AU - Lin, S. T.

AU - Young, K. L.

AU - Chiu, K. Y.

PY - 1997

Y1 - 1997

N2 - A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.

AB - A well-coupled field-oxide device (WCFOD) has been proposed to effectively improve ESD robustness of output buffers in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of the field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. A 0.5-μm high-speed 256 K SRAM product had been fabricated with this WCFOD to practically verify the excellent efficiency for output ESD protection. The HBM ESD failure voltage of this SRAM product has been improved up to above 6.5 KV without using any extra ESD-modification process, whereas the original output buffer just can sustain the HBM ESD stress of 1 KV only.

UR - http://www.scopus.com/inward/record.url?scp=0030650584&partnerID=8YFLogxK

U2 - 10.1109/VTSA.1997.614723

DO - 10.1109/VTSA.1997.614723

M3 - Paper

AN - SCOPUS:0030650584

SP - 40

EP - 44

T2 - Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 3 June 1997 through 5 June 1997

ER -

Efficient output ESD protection of high-speed SRAM IC with well-coupled technique in sub-μm CMOS technology

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