Abstract
A novel square-type layout style is proposed to efficiently implement CMOS output buffer with larger W/L ratio into a smaller silicon layout area than that of conventional finger-type layout style. Using this proposed layout style, the driving capability of CMOS output buffer in low-voltage submicron CMOS IC's can be effectively improved without increasing more layout area.
Original language | English |
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Pages | 193-195 |
Number of pages | 3 |
DOIs | |
State | Published - 1995 |
Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 24 Oct 1995 → 28 Oct 1995 |
Conference
Conference | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
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City | Beijing, China |
Period | 24/10/95 → 28/10/95 |