Efficiency improvement of GaN-B ased light-emitting diode prepared on GaN nanorod template

Cheng-Huang Kuo, L. C. Chang, C. W. Kuo, G. C. Chi

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.

Original languageEnglish
Article number5378548
Pages (from-to)257-259
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number4
DOIs
StatePublished - 15 Feb 2010

Keywords

  • InGaN-GaN
  • Light-emitting diode (led)
  • Nano
  • Template

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