Abstract
We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.
Original language | English |
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Article number | 5378548 |
Pages (from-to) | 257-259 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 22 |
Issue number | 4 |
DOIs | |
State | Published - 15 Feb 2010 |
Keywords
- InGaN-GaN
- Light-emitting diode (led)
- Nano
- Template