Efficiency enhancement InGaP/GaAs dual-junction solar cell with sub-wavelength antireflection nanorod arrays

H. W. Wang, M. A. Tsai, H. C. Chen, Y. L. Tsai, P. C. Tseng, C. Y. Jang, Pei-Chen Yu, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated antireflection nanorod arrays. After self-assembled Ni clusters ,the nanorod arrays were fabricated by inductively-coupled-plasma reactive ion etching. The conversion efficiency were measured under one-sun air mass 1.5 global illuminations at room temperature. The short current of the nanorod arrays cell was enhanced 10.0% and the efficiency was enhanced 10.8%. We were also studied the light absorption efficiencies of the top InGaP and bottom GaAs cells under the influence of nanorod arrays. Surface nanorod arrays were not only as antireflection layers but also scattering sources. The nanorod arrays structure can be significant improved the maximum conversion efficiency.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages2132-2134
Number of pages3
DOIs
StatePublished - 20 Dec 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

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