Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays

Min An Tsai; Peichen Yu; C. L. Chao; C. H. Chiu; Hao-Chung Kuo; Shiuan-Huei Lin; J. J. Huang; Tien-chang Lu; S. C. Wang

doi:10.1109/LPT.2008.2010556

Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays

Min An Tsai^*, Peichen Yu, C. L. Chao, C. H. Chiu, Hao-Chung Kuo, Shiuan-Huei Lin, J. J. Huang, Tien-chang Lu, S. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorodarrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20°.

Original language	English
Article number	4738362
Pages (from-to)	257-259
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2008.2010556
State	Published - 15 Feb 2009

Keywords

Beam shaping
GaN
High-aspect-ratio nanorod arrays
Vertical-injection light-emitting diodes (VI-LEDs)

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10.1109/LPT.2008.2010556

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title = "Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays",

abstract = "The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorodarrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20°.",

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author = "Tsai, {Min An} and Peichen Yu and Chao, {C. L.} and Chiu, {C. H.} and Hao-Chung Kuo and Shiuan-Huei Lin and Huang, {J. J.} and Tien-chang Lu and Wang, {S. C.}",

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journal = "IEEE Photonics Technology Letters",

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T1 - Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays

AU - Tsai, Min An

AU - Yu, Peichen

AU - Chao, C. L.

AU - Chiu, C. H.

AU - Kuo, Hao-Chung

AU - Lin, Shiuan-Huei

AU - Huang, J. J.

AU - Lu, Tien-chang

AU - Wang, S. C.

PY - 2009/2/15

Y1 - 2009/2/15

N2 - The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorodarrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20°.

AB - The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorodarrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20°.

KW - Beam shaping

KW - GaN

KW - High-aspect-ratio nanorod arrays

KW - Vertical-injection light-emitting diodes (VI-LEDs)

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U2 - 10.1109/LPT.2008.2010556

DO - 10.1109/LPT.2008.2010556

M3 - Article

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VL - 21

SP - 257

EP - 259

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

M1 - 4738362

ER -

Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays

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Keywords

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