Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation

Chao Hsun Wang; Shih Pang Chang; Pu Hsi Ku; Yu-Pin Lan; Chien-Chung Lin; Hao-Chung Kuo; Tien-Chang Lu; Shing Chung Wang; Chun-Yen Chang

doi:10.1143/APEX.5.042101

Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation

Chao Hsun Wang, Shih Pang Chang, Pu Hsi Ku, Yu-Pin Lan, Chien-Chung Lin, Hao-Chung Kuo^*, Tien-Chang Lu, Shing Chung Wang, Chun-Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities.

Original language	English
Article number	042101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Express
Volume	5
Issue number	4
DOIs	https://doi.org/10.1143/APEX.5.042101
State	Published - Apr 2012

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title = "Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation",

abstract = "Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities.",

author = "Wang, {Chao Hsun} and Chang, {Shih Pang} and Ku, {Pu Hsi} and Yu-Pin Lan and Chien-Chung Lin and Hao-Chung Kuo and Tien-Chang Lu and Wang, {Shing Chung} and Chun-Yen Chang",

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T1 - Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation

AU - Wang, Chao Hsun

AU - Chang, Shih Pang

AU - Ku, Pu Hsi

AU - Lan, Yu-Pin

AU - Lin, Chien-Chung

AU - Kuo, Hao-Chung

AU - Lu, Tien-Chang

AU - Wang, Shing Chung

AU - Chang, Chun-Yen

PY - 2012/4

Y1 - 2012/4

N2 - Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities.

AB - Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities.

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 042101

ER -

Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selective carrier distribution manipulation

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