EFFECTS OF X-RAY IRRADIATION ON THE CHANNEL HOT-CARRIER RELIABILITY OF THIN-OXIDE n-CHANNEL MOSFETs.

J. Y.C. Sun*, J. R. Maldonado, M. D. Rodriquez, J. Laskar, D. S. Zicherman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

The effects of x-ray irradiation on the reliability of n-channel MOSFET's with 10nm gate oxides are reported as a function of dose (1. 5 multiplied by 10**6 and 1. 5 multiplied by 10**7 rads) and temperature (300K and 77K). The dominant channel hot-carrier degradation appears to be due to interface-state generation instead of bulk oxide traps, independent of x-ray irradiation. The density of residual positive traps must be reduced to minimize channel-hot-electron induced threshold voltage shift. The residual neutral traps after x-ray exposure and 400C forming-gas anneal do not reduce the device lifetime under worst-case channel hot-carrier stress conditions. In this respect, less sensitive resists may be used for x-ray lithography processes.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages479-482
Number of pages4
ISBN (Print)493081314X
StatePublished - 1986

Publication series

NameConference on Solid State Devices and Materials

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