Recent studies showed that minor structural differences in the gate-to-drain (source) overlap of a MOSFET has unexpectedly strong influence on its characteristics. As the overlap is weakened, the drain drive degrades, the substrate and gate currents show abnormal behaviors, and the device lifetime suffers. A simple physical model is presented that adequately explains most of these observed high-field effects, including the asymmetry in device properties. Implications of the weak-overlap phenomena on future process and device designs are discussed.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1986|