EFFECTS OF WEAK GATE-TO-DRAIN (SOURCE) OVERLAP ON MOSFET CHARACTERISTICS.

P. K. Ko*, T. Y. Chan, A. T. Wu, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

Recent studies showed that minor structural differences in the gate-to-drain (source) overlap of a MOSFET has unexpectedly strong influence on its characteristics. As the overlap is weakened, the drain drive degrades, the substrate and gate currents show abnormal behaviors, and the device lifetime suffers. A simple physical model is presented that adequately explains most of these observed high-field effects, including the asymmetry in device properties. Implications of the weak-overlap phenomena on future process and device designs are discussed.

Original languageEnglish
Pages (from-to)292-295
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1986

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