Effects of vanadium incorporation on the electron schottky barrier height reduction of NiGe/Ge

Yi Ju Chen, Bing-Yue Tsui

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Effects of vanadium incorporation on the electron Schottky barrier height reduction ofNiGe/Ge is investigated. The best results achieved in this work is 70 meV electron Schottky barrier height reduction by depositing vanadium layer followed by Ar ion bombardment.

    Original languageEnglish
    Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1-2
    Number of pages2
    ISBN (Electronic)9781538629079
    DOIs
    StatePublished - 1 Dec 2017
    Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
    Duration: 18 Oct 201720 Oct 2017

    Publication series

    NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
    Volume2017-January

    Conference

    Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
    Country/TerritoryTaiwan
    CityHsinchu
    Period18/10/1720/10/17

    Keywords

    • Germanium
    • Schottky barrier height
    • Vanadium

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