Effects of ultrathin tantalum seeding layers on sol-gel-derived SrBi 2Ta2O9 thin films

Ching Chich Leu*, Chao-Hsin Chien, Ming Jui Yang, Ming Che Yang, Tiao Yuan Huang, Hung Tao Lin, Chen Ti Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The effects of Ta seeding layer on the crystalline microstructure and ferroelectric properties of sol-gel-derived strontium-bismuth-tantalate (SBT) thin films were investigated. Ultrathin (<1 nm) Ta seeding layers were deposited onto Pt/TiO2/SiO2/Si substrates by magnetron sputtering at room temperature before spin coating of SBT thin films. Our results show that the presence of Ta seed layer induces significant changes in the crystallinity and microstructure of the resultant SBT thin films, resulting in improved ferroelectric properties in terms of spontaneous polarization. Interestingly, the remanent polarization (2Pr) of SBT films is also found to initially increase and then decrease with increasing Ta thickness, showing a peak value of 18.8 μC/cm2 (@5 V) at Ta thickness of around 0.23 nm. Since a stoichiometric SBT solution was employed in our experiments, the additional Ta on the Pt surface is thought to provide a Ta-rich environment for SBT films, which, in turn, results in lower nucleation activation energy for crystallization.

Original languageEnglish
Pages (from-to)4600-4602
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 17 Jun 2002


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