Abstract
The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi 2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.
Original language | English |
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Pages (from-to) | 7327-7331 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 10 |
DOIs | |
State | Published - 11 Oct 2005 |
Keywords
- Amorphous silicon
- Crystalline silicon
- NILC
- Ni-metal-induced lateral crystallization
- Polycrystalline Silicon
- Tensile stress and thin-film transistor