Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon

Chih Yuan Hou; Yew-Chuhg Wu

doi:10.1143/JJAP.44.7327

Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon

Chih Yuan Hou, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi₂ precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi₂ precipitates, and (3) the subsequent migration of NiSi₂ precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi ₂ formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.

Original language	English
Pages (from-to)	7327-7331
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7327
State	Published - 11 Oct 2005

Keywords

Amorphous silicon
Crystalline silicon
NILC
Ni-metal-induced lateral crystallization
Polycrystalline Silicon
Tensile stress and thin-film transistor

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10.1143/JJAP.44.7327

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title = "Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon",

abstract = "The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi 2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.",

keywords = "Amorphous silicon, Crystalline silicon, NILC, Ni-metal-induced lateral crystallization, Polycrystalline Silicon, Tensile stress and thin-film transistor",

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T1 - Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon

AU - Hou, Chih Yuan

AU - Wu, Yew-Chuhg

PY - 2005/10/11

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N2 - The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi 2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.

AB - The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi 2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.

KW - Amorphous silicon

KW - Crystalline silicon

KW - NILC

KW - Ni-metal-induced lateral crystallization

KW - Polycrystalline Silicon

KW - Tensile stress and thin-film transistor

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Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon

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