Effects of stress on the growth of TiSi2 thin films on (001)Si

S. L. Cheng; H. Y. Huang; Y. C. Peng; L. J. Chen; Bing-Yue Tsui; C. J. Tsai; S. S. Guo

doi:10.1063/1.123565

Effects of stress on the growth of TiSi₂ thin films on (001)Si

S. L. Cheng^*, H. Y. Huang, Y. C. Peng, L. J. Chen, Bing-Yue Tsui, C. J. Tsai, S. S. Guo

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Tensile stress induced by backside CoSi₂ films on a silicon substrate has been found to enhance the growth of C54-TiSi₂ on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi₂ on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800°C for 30 s, the thickness of the C54-TiSi₂ films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti suicide thin films.

Original language	English
Pages (from-to)	1406-1408
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	10
DOIs	https://doi.org/10.1063/1.123565
State	Published - 8 Mar 1999

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title = "Effects of stress on the growth of TiSi2 thin films on (001)Si",

abstract = "Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800°C for 30 s, the thickness of the C54-TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti suicide thin films.",

author = "Cheng, {S. L.} and Huang, {H. Y.} and Peng, {Y. C.} and Chen, {L. J.} and Bing-Yue Tsui and Tsai, {C. J.} and Guo, {S. S.}",

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TY - JOUR

T1 - Effects of stress on the growth of TiSi2 thin films on (001)Si

AU - Cheng, S. L.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Chen, L. J.

AU - Tsui, Bing-Yue

AU - Tsai, C. J.

AU - Guo, S. S.

PY - 1999/3/8

Y1 - 1999/3/8

N2 - Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800°C for 30 s, the thickness of the C54-TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti suicide thin films.

AB - Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800°C for 30 s, the thickness of the C54-TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti suicide thin films.

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DO - 10.1063/1.123565

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Effects of stress on the growth of TiSi₂ thin films on (001)Si

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