Effects of SiH4, GeH4, and B2H6 on the Nucleation and Deposition of Polycrystalline Si1-xGex Films

Horng-Chih Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, T. G. Jung, H. Y. Lin

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Abstract

In this study, the effects of different reactants, namely, SiH4, GeH4 and B2H4, on the nucleation and deposition of polycrystalline silicon-germanium (poly-Si1-xGex) films on oxide surface in an ultrahigh vacuum chemical vapor deposition reactor were explored. The results show that the addition of GeH4 tends to retard the nucleation process of poly films while B2H6 is preferential for adsorbing on the oxide surface. These effects lead to different incubation duration depending on the kind of reactants used. On the deposition of poly-Si1-xGex films, it is observed that the Ge incorporation is only slightly related to the substrate type, but the deposition mode of poly-Si1-xGex films is much different from that of epitaxial growth on Si(100). The incorporation of Ge atoms also overcomes the anomalous doping effect encountered in heavily boron-doped poly-Si films and allows extremely low resistivity (below 2 mΩ-cm) poly films to be obtained at low temperatures (≤550°C).

Original languageEnglish
Pages (from-to)2559-2563
Number of pages5
JournalJournal of the Electrochemical Society
Volume141
Issue number9
DOIs
StatePublished - 1 Jan 1994

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