Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu; Chen Shuo Huang; Yi Ling Huang; Jing Ru Lin; Szu Lin Cheng; Yoshio Nishi; S. M. Sze

doi:10.1063/1.3365177

Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu^*, Chen Shuo Huang, Yi Ling Huang, Jing Ru Lin, Szu Lin Cheng, Yoshio Nishi, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO ₂ /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO ₂ /Ge interface at 150 °C. A smooth interfacial GeO ₂ layer between gate SiO ₂ and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

Original language	English
Article number	112902
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	11
DOIs	https://doi.org/10.1063/1.3365177
State	Published - 26 Mar 2010

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title = "Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology",

abstract = " Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.",

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AU - Liu, Po-Tsun

AU - Huang, Chen Shuo

AU - Huang, Yi Ling

AU - Lin, Jing Ru

AU - Cheng, Szu Lin

AU - Nishi, Yoshio

AU - Sze, S. M.

PY - 2010/3/26

Y1 - 2010/3/26

N2 - Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

AB - Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

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