Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates

Huang-Chung Cheng; Shih Yuan Ueng; Ping Wei Wang; Tzong Kuei Kang; Tien-Sheng Chao

doi:10.1143/JJAP.34.5037

Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates

Huang-Chung Cheng, Shih Yuan Ueng, Ping Wei Wang, Tzong Kuei Kang, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

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Abstract

Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N₂О and diluted O₂ ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (АТС) process, CF₄ addition in the O₂ plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O₂ plasma. This is because CF₄ addition in the АТС can remove the damaged silicon layer and smooth the silicon surface since the O₂ plasma can effectively only strip the polymeric layer. In addition, the N₂0-grown oxides can enlarge the process window of the CF₄/O₂ АТС treatments with respect to pure oxides.

Original language	English
Pages (from-to)	5037-5042
Number of pages	6
Journal	Japanese journal of applied physics
Volume	34
Issue number	9R
DOIs	https://doi.org/10.1143/JJAP.34.5037
State	Published - Sep 1995

Keywords

Etching damage
Interface microrough ness
Postetching treatment
Reactive ion etching
Silicon dioxide
TZDB

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10.1143/JJAP.34.5037

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title = "Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates",

abstract = "Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2О and diluted O2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (АТС) process, CF4 addition in the O2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O2 plasma. This is because CF4 addition in the АТС can remove the damaged silicon layer and smooth the silicon surface since the O2 plasma can effectively only strip the polymeric layer. In addition, the N20-grown oxides can enlarge the process window of the CF4/O2 АТС treatments with respect to pure oxides.",

keywords = "Etching damage, Interface microrough ness, Postetching treatment, Reactive ion etching, Silicon dioxide, TZDB",

author = "Huang-Chung Cheng and Ueng, {Shih Yuan} and Wang, {Ping Wei} and Kang, {Tzong Kuei} and Tien-Sheng Chao",

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AU - Cheng, Huang-Chung

AU - Ueng, Shih Yuan

AU - Wang, Ping Wei

AU - Kang, Tzong Kuei

AU - Chao, Tien-Sheng

PY - 1995/9

Y1 - 1995/9

N2 - Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2О and diluted O2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (АТС) process, CF4 addition in the O2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O2 plasma. This is because CF4 addition in the АТС can remove the damaged silicon layer and smooth the silicon surface since the O2 plasma can effectively only strip the polymeric layer. In addition, the N20-grown oxides can enlarge the process window of the CF4/O2 АТС treatments with respect to pure oxides.

AB - Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2О and diluted O2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (АТС) process, CF4 addition in the O2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O2 plasma. This is because CF4 addition in the АТС can remove the damaged silicon layer and smooth the silicon surface since the O2 plasma can effectively only strip the polymeric layer. In addition, the N20-grown oxides can enlarge the process window of the CF4/O2 АТС treatments with respect to pure oxides.

KW - Etching damage

KW - Interface microrough ness

KW - Postetching treatment

KW - Reactive ion etching

KW - Silicon dioxide

KW - TZDB

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Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates

Abstract

Keywords

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