Effects of postdeposition annealing on the characteristics of Hf Ox Ny dielectrics on germanium and silicon substrates

Chao Ching Cheng*, Chao-Hsin Chien, Ching Wei Chen, Shih Lu Hsu, Chun Hui Yang, Chun Yen Chang

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

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    Material Science

    Engineering

    Chemical Engineering