Effects of post-deposition annealing atmosphere and duration on sol-gel derived amorphous indium-zinc-oxide thin film transistors

Wan Fang Chung*, Ting Chang Chang, Hung Wei Li, Tseung-Yuen Tseng, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and oxygen, were used in this study. Experimental results showed that the O 2-annealed devices showed better electrical characteristics than the N 2-annealed samples. Under O 2-annealing, field effect mobility was enhanced to 1.47 cm 2/V s, the threshold voltage increased to -4.61 V and the subthreshold swing improved to 0.86 V/dec. Also, the transfer characteristics of a-IZO TFTs improve with annealing time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the chemical composition of the IZO film was modified by the oxygen annealing.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages265-271
Number of pages7
Edition6
DOIs
StatePublished - 1 Dec 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 9 Oct 201114 Oct 2011

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period9/10/1114/10/11

Fingerprint

Dive into the research topics of 'Effects of post-deposition annealing atmosphere and duration on sol-gel derived amorphous indium-zinc-oxide thin film transistors'. Together they form a unique fingerprint.

Cite this