Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Qbd) value under gate injection stress polarity (-Vg) is independent of the doping concentration, Qbd under substrate injection stress polarity (+Vg) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume3
Issue number2
DOIs
StatePublished - Feb 2000

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