Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen; Horng-Chih Lin; Chun Yen Chang; Tiao Yuan Huang; Chao-Hsin Chien; Mong Song Liang

doi:10.1149/1.1390971

Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q _bd ) value under gate injection stress polarity (-V _g ) is independent of the doping concentration, Q _bd under substrate injection stress polarity (+V _g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

Original language	English
Pages (from-to)	103-105
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.1390971
State	Published - 1 Feb 2000

Access to Document

10.1149/1.1390971

Cite this

@article{92785f488f1a43438107e9be8b71cb59,

title = "Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides",

abstract = " Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping. ",

author = "Chen, {Chi Chun} and Horng-Chih Lin and Chang, {Chun Yen} and Huang, {Tiao Yuan} and Chao-Hsin Chien and Liang, {Mong Song}",

year = "2000",

month = feb,

day = "1",

doi = "10.1149/1.1390971",

language = "English",

volume = "3",

pages = "103--105",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

AU - Chen, Chi Chun

AU - Lin, Horng-Chih

AU - Chang, Chun Yen

AU - Huang, Tiao Yuan

AU - Chien, Chao-Hsin

AU - Liang, Mong Song

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

AB - Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

UR - http://www.scopus.com/inward/record.url?scp=0034140309&partnerID=8YFLogxK

U2 - 10.1149/1.1390971

DO - 10.1149/1.1390971

M3 - Article

AN - SCOPUS:0034140309

SN - 1099-0062

VL - 3

SP - 103

EP - 105

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Abstract

Access to Document

Other files and links

Fingerprint

Cite this