Effects of oxygen plasma ashing on barrier dielectric SiCN film

C. W. Chen; T. C. Chang; Po-Tsun Liu; T. M. Tsai; Tseung-Yuen Tseng

doi:10.1149/1.1833666

Effects of oxygen plasma ashing on barrier dielectric SiCN film

C. W. Chen^*, T. C. Chang, Po-Tsun Liu, T. M. Tsai, Tseung-Yuen Tseng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si - O₂ bonds appear at the surface of SiCN film after O₂ plasma ashing. The formation of the oxidized layer, SiO _xCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O₂ plasma ashing. All rights reserved.

Original language	English
Pages (from-to)	G11-G13
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1149/1.1833666
State	Published - 2005

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title = "Effects of oxygen plasma ashing on barrier dielectric SiCN film",

abstract = "Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si - O2 bonds appear at the surface of SiCN film after O2 plasma ashing. The formation of the oxidized layer, SiO xCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O2 plasma ashing. All rights reserved.",

author = "Chen, {C. W.} and Chang, {T. C.} and Po-Tsun Liu and Tsai, {T. M.} and Tseung-Yuen Tseng",

year = "2005",

doi = "10.1149/1.1833666",

language = "English",

volume = "8",

pages = "G11--G13",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

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TY - JOUR

T1 - Effects of oxygen plasma ashing on barrier dielectric SiCN film

AU - Chen, C. W.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Tsai, T. M.

AU - Tseng, Tseung-Yuen

PY - 2005

Y1 - 2005

N2 - Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si - O2 bonds appear at the surface of SiCN film after O2 plasma ashing. The formation of the oxidized layer, SiO xCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O2 plasma ashing. All rights reserved.

AB - Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si - O2 bonds appear at the surface of SiCN film after O2 plasma ashing. The formation of the oxidized layer, SiO xCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O2 plasma ashing. All rights reserved.

UR - http://www.scopus.com/inward/record.url?scp=12344259691&partnerID=8YFLogxK

U2 - 10.1149/1.1833666

DO - 10.1149/1.1833666

M3 - Article

AN - SCOPUS:12344259691

SN - 1099-0062

VL - 8

SP - G11-G13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 1

ER -

Effects of oxygen plasma ashing on barrier dielectric SiCN film

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