Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

You Da Lin; Yew-Chuhg Wu; Chi Wei Chao; Guo Ren Hu

doi:10.1016/S0254-0584(03)00108-1

Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

You Da Lin, Yew-Chuhg Wu^*, Chi Wei Chao, Guo Ren Hu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.

Original language	English
Pages (from-to)	577-580
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	80
Issue number	3
DOIs	https://doi.org/10.1016/S0254-0584(03)00108-1
State	Published - 26 Jun 2003

Keywords

Amorphous silicon
Metal induced lateral crystallization (MILC)
Nickel and nickel oxide
Oxygen
Polycrystalline silicon

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10.1016/S0254-0584(03)00108-1

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title = "Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films",

abstract = "Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.",

keywords = "Amorphous silicon, Metal induced lateral crystallization (MILC), Nickel and nickel oxide, Oxygen, Polycrystalline silicon",

author = "Lin, {You Da} and Yew-Chuhg Wu and Chao, {Chi Wei} and Hu, {Guo Ren}",

year = "2003",

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T1 - Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

AU - Lin, You Da

AU - Wu, Yew-Chuhg

AU - Chao, Chi Wei

AU - Hu, Guo Ren

PY - 2003/6/26

Y1 - 2003/6/26

N2 - Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.

AB - Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.

KW - Amorphous silicon

KW - Metal induced lateral crystallization (MILC)

KW - Nickel and nickel oxide

KW - Oxygen

KW - Polycrystalline silicon

UR - http://www.scopus.com/inward/record.url?scp=0037881949&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(03)00108-1

DO - 10.1016/S0254-0584(03)00108-1

M3 - Article

AN - SCOPUS:0037881949

SN - 0254-0584

VL - 80

SP - 577

EP - 580

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 3

ER -

Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

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Keywords

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