Abstract
Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.
| Original language | English |
|---|---|
| Pages (from-to) | 1708-1711 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 35 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1 Jan 2006 |
Keywords
- Amorphous silicon
- Nickel oxide
- Nickel-induced lateral crystallization (NILC)
- Oxygen
- Polycrystalline silicon