Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering

Che Wei Hsu, Tsung Chieh Cheng, Chun Hui Yang, Yi Ling Shen, Jong-Shinn Wu*, Sheng Yao Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

We deposited a ZnO thin film on a microslide glass substrate at room temperature by employing the RF reactive magnetron sputtering process. Our results revealed that deposition rate decreases by increasing O2/(Ar + O2) ratio that was caused by two mechanisms. The first mechanism was the reduction of plasma density and, thus, argon ion density; caused by the addition of highly electronegative oxygen. While the second mechanism was target poisoning caused by the oxidation of the target. Additionally, at the O 2/(Ar + O2) ratio of ∼0.3 and the help of XPS analysis the optimum stoichiometry of ZnO thin film (the highest binding energy and content fraction of OI peak (O-Zn bond)) and the best polycrystallinity (the lowest FWHM with largest grain size) was found.

Original languageEnglish
Pages (from-to)1774-1776
Number of pages3
JournalJournal of Alloys and Compounds
Volume509
Issue number5
DOIs
StatePublished - 3 Feb 2011

Keywords

  • Radio frequency
  • Sputtering
  • Target poisoning
  • X-ray diffraction
  • X-ray photoelectron spectroscopy
  • Zinc oxide

Fingerprint

Dive into the research topics of 'Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering'. Together they form a unique fingerprint.

Cite this