Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films

Ching Chich Leu; Shih Hsiung Chan; Haur Ywh Chen; Ray-Hua Horng; Dong Sing Wuu; Luh Huei Wu; Tiao Yuan Huang; Chun Yen Chang; Simon Min Sze

doi:10.1016/S0026-2714(99)00321-2

Effects of O₂ plasma treatment on the electric and dielectric characteristics of Ba_0.7Sr_0.3TiO₃ thin films

Ching Chich Leu^*, Shih Hsiung Chan, Haur Ywh Chen, Ray-Hua Horng, Dong Sing Wuu, Luh Huei Wu, Tiao Yuan Huang, Chun Yen Chang, Simon Min Sze

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effects of the O₂ plasma treatment on the electric and dielectric characteristics of Ba_0.7Sr_0.3TiO₃ (BST) thin films were investigated. As a result of the exposure of the as-deposited or the annealed BST films to the O₂ plasma, the leakage current density of the BST films can be improved. Typically, the leakage current density can decrease by three orders of magnitude as compared that of the non-plasma treated sample at an applied voltage of 1.5 V. It is found that the plasma treatment changes the surface morphology. The capacitance of the BST films was reduced by 10%∼30%. The improvement of the leakage current density and the reduction of a dielectric constant for the plasma treated samples could be attributed to the reduction of carbon contaminations of BST thin films. The 10 year life time of the time-dependent dielectric breakdown (TDDB) studies indicates that all the samples have a life time of over 10 years of operation at a voltage bias of 1 V.

Original language	English
Pages (from-to)	679-682
Number of pages	4
Journal	Microelectronics Reliability
Volume	40
Issue number	4-5
DOIs	https://doi.org/10.1016/S0026-2714(99)00321-2
State	Published - 1 Apr 2000

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title = "Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films",

abstract = "The effects of the O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 (BST) thin films were investigated. As a result of the exposure of the as-deposited or the annealed BST films to the O2 plasma, the leakage current density of the BST films can be improved. Typically, the leakage current density can decrease by three orders of magnitude as compared that of the non-plasma treated sample at an applied voltage of 1.5 V. It is found that the plasma treatment changes the surface morphology. The capacitance of the BST films was reduced by 10%∼30%. The improvement of the leakage current density and the reduction of a dielectric constant for the plasma treated samples could be attributed to the reduction of carbon contaminations of BST thin films. The 10 year life time of the time-dependent dielectric breakdown (TDDB) studies indicates that all the samples have a life time of over 10 years of operation at a voltage bias of 1 V.",

author = "Leu, {Ching Chich} and Chan, {Shih Hsiung} and Chen, {Haur Ywh} and Ray-Hua Horng and Wuu, {Dong Sing} and Wu, {Luh Huei} and Huang, {Tiao Yuan} and Chang, {Chun Yen} and Sze, {Simon Min}",

year = "2000",

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doi = "10.1016/S0026-2714(99)00321-2",

language = "English",

volume = "40",

pages = "679--682",

journal = "Microelectronics Reliability",

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T1 - Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films

AU - Leu, Ching Chich

AU - Chan, Shih Hsiung

AU - Chen, Haur Ywh

AU - Horng, Ray-Hua

AU - Wuu, Dong Sing

AU - Wu, Luh Huei

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

AU - Sze, Simon Min

PY - 2000/4/1

Y1 - 2000/4/1

N2 - The effects of the O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 (BST) thin films were investigated. As a result of the exposure of the as-deposited or the annealed BST films to the O2 plasma, the leakage current density of the BST films can be improved. Typically, the leakage current density can decrease by three orders of magnitude as compared that of the non-plasma treated sample at an applied voltage of 1.5 V. It is found that the plasma treatment changes the surface morphology. The capacitance of the BST films was reduced by 10%∼30%. The improvement of the leakage current density and the reduction of a dielectric constant for the plasma treated samples could be attributed to the reduction of carbon contaminations of BST thin films. The 10 year life time of the time-dependent dielectric breakdown (TDDB) studies indicates that all the samples have a life time of over 10 years of operation at a voltage bias of 1 V.

AB - The effects of the O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 (BST) thin films were investigated. As a result of the exposure of the as-deposited or the annealed BST films to the O2 plasma, the leakage current density of the BST films can be improved. Typically, the leakage current density can decrease by three orders of magnitude as compared that of the non-plasma treated sample at an applied voltage of 1.5 V. It is found that the plasma treatment changes the surface morphology. The capacitance of the BST films was reduced by 10%∼30%. The improvement of the leakage current density and the reduction of a dielectric constant for the plasma treated samples could be attributed to the reduction of carbon contaminations of BST thin films. The 10 year life time of the time-dependent dielectric breakdown (TDDB) studies indicates that all the samples have a life time of over 10 years of operation at a voltage bias of 1 V.

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U2 - 10.1016/S0026-2714(99)00321-2

DO - 10.1016/S0026-2714(99)00321-2

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AN - SCOPUS:8644230304

SN - 0026-2714

VL - 40

SP - 679

EP - 682

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4-5

ER -

Effects of O₂ plasma treatment on the electric and dielectric characteristics of Ba_0.7Sr_0.3TiO₃ thin films

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