Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

Zhen Hong Huang; Chia Hao Chang; Wei Syuan Lin; Ting Chun Lo; Ying Chi Ching; Yu Jen Huang; Robin Christine Hwang; Chin Wen Chou; Tian Li Wu

doi:10.1109/IPFA58228.2023.10249094

Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

Zhen Hong Huang, Chia Hao Chang, Wei Syuan Lin, Ting Chun Lo, Ying Chi Ching, Yu Jen Huang, Robin Christine Hwang, Chin Wen Chou, Tian Li Wu^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we study the effect of N₂ surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N₂ plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.

Original language	English
Title of host publication	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350301649
DOIs	https://doi.org/10.1109/IPFA58228.2023.10249094
State	Published - 2023
Event	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia Duration: 24 Jul 2023 → 27 Jul 2023

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2023-July

Conference

Conference	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Country/Territory	Malaysia
City	Pulau Pinang
Period	24/07/23 → 27/07/23

Keywords

HTRB
p-GaN HEMT
plasma pretreatment

Access to Document

10.1109/IPFA58228.2023.10249094

Cite this

Huang, Z. H., Chang, C. H., Lin, W. S., Lo, T. C., Ching, Y. C., Huang, Y. J., Hwang, R. C., Chou, C. W., & Wu, T. L. (2023). Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA58228.2023.10249094

Huang, Zhen Hong ; Chang, Chia Hao ; Lin, Wei Syuan et al. / Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs. 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs",

abstract = "In this work, we study the effect of N2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.",

keywords = "HTRB, p-GaN HEMT, plasma pretreatment",

author = "Huang, {Zhen Hong} and Chang, {Chia Hao} and Lin, {Wei Syuan} and Lo, {Ting Chun} and Ching, {Ying Chi} and Huang, {Yu Jen} and Hwang, {Robin Christine} and Chou, {Chin Wen} and Wu, {Tian Li}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 ; Conference date: 24-07-2023 Through 27-07-2023",

year = "2023",

doi = "10.1109/IPFA58228.2023.10249094",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023",

address = "美國",

}

Huang, ZH, Chang, CH, Lin, WS, Lo, TC, Ching, YC, Huang, YJ, Hwang, RC, Chou, CW & Wu, TL 2023, Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs. in 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2023-July, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023, Pulau Pinang, Malaysia, 24/07/23. https://doi.org/10.1109/IPFA58228.2023.10249094

Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs. / Huang, Zhen Hong; Chang, Chia Hao; Lin, Wei Syuan et al.
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ching, Ying Chi

AU - Huang, Yu Jen

AU - Hwang, Robin Christine

AU - Chou, Chin Wen

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AB - In this work, we study the effect of N2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.

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Huang ZH, Chang CH, Lin WS, Lo TC, Ching YC, Huang YJ et al. Effects of N₂ Pretreatment on Performance and Stabilities of Power p-GaN HEMTs. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA58228.2023.10249094