Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

F. C. Jong; T. Y. Huang; Tien-Sheng Chao; Horng-Chih Lin; M. F. Wang; C. Y. Chang

doi:10.1049/el:19980207

Effects of N ₂ O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

F. C. Jong^*, T. Y. Huang, Tien-Sheng Chao, Horng-Chih Lin, M. F. Wang, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report the effects of N₂O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N₂0-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.

Original language	English
Pages (from-to)	404-406
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1049/el:19980207
State	Published - 19 Feb 1998

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@article{80135514e4b0484c8b4ee6cd7f0c0c0c,

title = "Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs",

abstract = "The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N20-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.",

author = "Jong, {F. C.} and Huang, {T. Y.} and Tien-Sheng Chao and Horng-Chih Lin and Wang, {M. F.} and Chang, {C. Y.}",

year = "1998",

month = feb,

day = "19",

doi = "10.1049/el:19980207",

language = "English",

volume = "34",

pages = "404--406",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "4",

}

TY - JOUR

T1 - Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

AU - Jong, F. C.

AU - Huang, T. Y.

AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

AU - Wang, M. F.

AU - Chang, C. Y.

PY - 1998/2/19

Y1 - 1998/2/19

N2 - The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N20-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.

AB - The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N20-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.

UR - http://www.scopus.com/inward/record.url?scp=0032545862&partnerID=8YFLogxK

U2 - 10.1049/el:19980207

DO - 10.1049/el:19980207

M3 - Article

AN - SCOPUS:0032545862

SN - 0013-5194

VL - 34

SP - 404

EP - 406

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Effects of N ₂ O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

Abstract

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