Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Tung Ming Pan*, Fu-Hsiang Ko, Tien-Sheng Chao, Chieh Chuang Chen, Kuei Shu Chang-Liao

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Scopus citations

    Abstract

    In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.

    Original languageEnglish
    Pages (from-to)G201-G203
    Number of pages3
    JournalElectrochemical and Solid-State Letters
    Volume8
    Issue number8
    DOIs
    StatePublished - 14 Sep 2005

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