Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Tung Ming Pan; Fu-Hsiang Ko; Tien-Sheng Chao; Chieh Chuang Chen; Kuei Shu Chang-Liao

doi:10.1149/1.1945367

Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Tung Ming Pan^*, Fu-Hsiang Ko, Tien-Sheng Chao, Chieh Chuang Chen, Kuei Shu Chang-Liao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (E_bd) and charge-to-breakdown ratios (Q_bd) and the highest leakage currents and interface state densities (D_it). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D _it and a higher Q_bd than did the other metals.

Original language	English
Pages (from-to)	G201-G203
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	8
DOIs	https://doi.org/10.1149/1.1945367
State	Published - 14 Sep 2005

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abstract = "In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.",

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AU - Pan, Tung Ming

AU - Ko, Fu-Hsiang

AU - Chao, Tien-Sheng

AU - Chen, Chieh Chuang

AU - Chang-Liao, Kuei Shu

PY - 2005/9/14

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N2 - In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.

AB - In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.

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Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Abstract

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