Effects of low tempersture NH3 treatment on HfO2/SiO2 stack gate dielectrics fabricated by MOCVD system

Wen Tai Lu*, Chao-Hsin Chien, Ying Chang Lin, Ming Jui Yang, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

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Engineering & Materials Science