Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Ji Hao Cheng; Wei Chih Peng; Yew-Chuhg Wu; Hao Ouyang

doi:10.1149/1.2731196

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Ji Hao Cheng^*, Wei Chih Peng, Yew-Chuhg Wu, Hao Ouyang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.

Original language	English
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages	285-287
Number of pages	3
Edition	2
DOIs	https://doi.org/10.1149/1.2731196
State	Published - 1 Dec 2007
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: 6 May 2007 → 10 May 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	6/05/07 → 10/05/07

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10.1149/1.2731196

Cite this

Cheng, J. H., Peng, W. C., Wu, Y-C., & Ouyang, H. (2007). Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 285-287). (ECS Transactions; Vol. 6, No. 2). https://doi.org/10.1149/1.2731196

Cheng, Ji Hao ; Peng, Wei Chih ; Wu, Yew-Chuhg et al. / Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. 2007. pp. 285-287 (ECS Transactions; 2).

@inproceedings{a3d8e87a600f42cd9840195ad434c88f,

title = "Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds",

abstract = "The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.",

author = "Cheng, {Ji Hao} and Peng, {Wei Chih} and Yew-Chuhg Wu and Hao Ouyang",

year = "2007",

month = dec,

day = "1",

doi = "10.1149/1.2731196",

language = "English",

isbn = "9781566775519",

series = "ECS Transactions",

number = "2",

pages = "285--287",

booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",

edition = "2",

note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Cheng, JH, Peng, WC, Wu, Y-C & Ouyang, H 2007, Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, pp. 285-287, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 6/05/07. https://doi.org/10.1149/1.2731196

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. / Cheng, Ji Hao; Peng, Wei Chih; Wu, Yew-Chuhg et al.
ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. 2007. p. 285-287 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

AU - Cheng, Ji Hao

AU - Peng, Wei Chih

AU - Wu, Yew-Chuhg

AU - Ouyang, Hao

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.

AB - The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.

UR - http://www.scopus.com/inward/record.url?scp=45749138785&partnerID=8YFLogxK

U2 - 10.1149/1.2731196

DO - 10.1149/1.2731196

M3 - Conference contribution

AN - SCOPUS:45749138785

SN - 9781566775519

T3 - ECS Transactions

SP - 285

EP - 287

BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

T2 - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Cheng JH, Peng WC, Wu Y-C, Ouyang H. Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. 2007. p. 285-287. (ECS Transactions; 2). doi: 10.1149/1.2731196

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

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