In this study we investigated the interfacial chemistry occurring between an atomic-layer-deposited Al2 O3 high- k film and a GaAs substrate and the impact of sulfidization and thermal annealing on the properties of the resultant capacitor. We observed that sulfide passivation of the Al2 O3 GaAs structure improved the effect of Fermi level pinning on the electrical characteristics, thereby providing a higher oxide capacitance, smaller frequency dispersion, and reduced surface states, as well as decreased interfacial charge trapping and gate leakage currents. Photoemission analysis indicated that the (N H4)2 S -treated GaAs improved the quality of the as-deposited Al2 O3 thin film and preserved the stoichiometry of the dielectric during subsequent high-temperature annealing. This behavior was closely correlated to the diminution of GaAs native oxides and elemental arsenic defects and their unwanted diffusion. In addition, thermal processing under an O2 atmosphere, relative to that under N2, decreased the thickness of the Al2 O3 gate dielectric and relieved the gate leakage degradation induced by metallic arsenic; as a result, superior dielectric reliability was attained. We discuss the underlying thermochemical reactions that account for these experimental observations.