The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O2 plasma attack during the nonetchback integrated process.
|Number of pages||3|
|Journal||Electrochemical and Solid-State Letters|
|State||Published - 1 Aug 1999|