Effects of H₂ and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system

Keyphrases

• Amorphous Films 33%
• Amorphous Hydrogenated Silicon Film 33%
• Amorphous State 33%
• Antenna Unit 33%
• Ar Flow 33%
• Ar Flow Rate 100%
• Argon 33%
• Deposited Film 33%
• Deposition Rate 66%
• Depositional System 100%
• Electrical Field 33%
• H2 Flow Rate 100%
• Hydrogen Flow Rate 33%
• Hydrogenated 33%
• Hydrogenated Silicon 100%
• Inductive Coupled Plasma 100%
• Langmuir Probe 66%
• Low-inductance Antenna 33%
• Microstructure 33%
• Multicrystalline Silicon 33%
• Optical Emission Spectrometer 66%
• Plasma Chemical Vapor Deposition 100%
• Quartz Substrate 66%
• Raman Spectrometer 33%
• Raman Spectroscopy 33%
• Si Film 33%
• Silane 33%
• Silicon Thin Film 100%
• X Ray Diffraction 33%
• X-ray Diffraction Pattern 33%
• X-ray Raman Scattering 33%

Engineering

• Antenna Unit 33%
• Chemical Vapor Deposition 100%
• Deposited Film 33%
• Deposition Rate 66%
• Deposition System 100%
• Electric Field 33%
• Flow Rate 100%
• Flow Velocity 100%
• Hydrogenated Amorphous Silicon 33%
• Inductive Coupled Plasma 100%
• Internals 33%
• Light Emission 66%
• Microcrystalline Silicon 33%
• Ray Diffraction 33%
• Silicon Dioxide 66%
• Thin Films 100%
• Vapor Deposition 100%
• X-Ray Diffraction Pattern 33%

Material Science

• Amorphous Film 25%
• Amorphous Silicon 25%
• Chemical Vapor Deposition 100%
• Diffraction Pattern 25%
• Film 100%
• Microcrystalline Silicon 25%
• Raman Spectroscopy 25%
• Silicon 100%
• Thin Films 100%
• X-Ray Diffraction 50%