Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2 O9/HfO2/Si structure

Ching Chich Leu; Chen Han Lin; Chao-Hsin Chien; Ming Jui Yang

doi:10.1557/jmr.2008.0248

Effects of HfO₂ buffer layer thickness on the properties of Pt/SrBi₂Ta₂ O₉/HfO₂/Si structure

Ching Chich Leu^*, Chen Han Lin, Chao-Hsin Chien, Ming Jui Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigated structural and characteristic changes in thin HfO₂ films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi₂ Ta₂O₉/Hfo₂/Si metal/ feffoelectric/insulator/semiconductor (MFIS) structures. HfO₂ films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO₂ as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO₂ limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

Original language	English
Pages (from-to)	2023-2032
Number of pages	10
Journal	Journal of Materials Research
Volume	23
Issue number	7
DOIs	https://doi.org/10.1557/jmr.2008.0248
State	Published - 1 Jul 2008

Access to Document

10.1557/jmr.2008.0248

Cite this

@article{1015dc9e345b448dbf5b4280c9a61b58,

title = "Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2 O9/HfO2/Si structure",

abstract = "We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2 Ta2O9/Hfo2/Si metal/ feffoelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.",

author = "Leu, {Ching Chich} and Lin, {Chen Han} and Chao-Hsin Chien and Yang, {Ming Jui}",

year = "2008",

month = jul,

day = "1",

doi = "10.1557/jmr.2008.0248",

language = "English",

volume = "23",

pages = "2023--2032",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "7",

}

TY - JOUR

T1 - Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2 O9/HfO2/Si structure

AU - Leu, Ching Chich

AU - Lin, Chen Han

AU - Chien, Chao-Hsin

AU - Yang, Ming Jui

PY - 2008/7/1

Y1 - 2008/7/1

N2 - We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2 Ta2O9/Hfo2/Si metal/ feffoelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

AB - We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2 Ta2O9/Hfo2/Si metal/ feffoelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

UR - http://www.scopus.com/inward/record.url?scp=48749129314&partnerID=8YFLogxK

U2 - 10.1557/jmr.2008.0248

DO - 10.1557/jmr.2008.0248

M3 - Article

AN - SCOPUS:48749129314

SN - 0884-2914

VL - 23

SP - 2023

EP - 2032

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 7

ER -

Effects of HfO₂ buffer layer thickness on the properties of Pt/SrBi₂Ta₂ O₉/HfO₂/Si structure

Abstract

Access to Document

Other files and links

Fingerprint

Cite this