Effects of HfO 2 trapping layer in Gd 2O 3 nanocrystal nonvolatile memory with multi-tunneling layers

Chia Hsin Chen, Chin Hsiang Liao, Chih Ting Lin, Jer Chyi Wang*, Po Wei Huang, Chao Sung Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Recently, nanocrystal (NC) memory such as gadolinium oxide NC (Gd 2O 3-NC) memory performed by the band-gap offset of a crystallized Gd 2O 3-NC dots surrounded by the amorphous Gd 2O 3 dielectrics has been proposed [1-2]. The crystallization temperature was optimized and the excellent memory properties were obtained [2]. In addition, to improve the programming/erasing (P/E) and retention characteristics of future nonvolatile memory, the BE-SONOS with SiO 2/SiN/ SiO 2 (ONO) tunneling layer has been proposed due to the suitable band engineering and large physical thickness [3]. In this paper, the novel Gd 2O 3-NC memory with HfO 2 charge trapping layer was investigated and multi-tunneling layer (Al 2O 3/IL-SiO 2) was applied to further improve the performance. The charge storage characteristic was related to the charge trapping phenomenon of HfO 2 layer.

Original languageEnglish
Title of host publication2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs
StatePublished - 2011
Event2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China
Duration: 17 Nov 201118 Nov 2011

Publication series

Name2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/TerritoryChina
CityTianjin
Period17/11/1118/11/11

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