Effects of growth temperature on In N / Ga N nanodots grown by metal organic chemical vapor deposition

Wen-Hao Chang; Wen Cheng Ke; Shu Hung Yu; Lin Lee; Ching Yu Chen; Wen Che Tsai; Hsuan Lin; Wu-Ching Chou; Ming Chih Lee; Wei-Kuo Chen

doi:10.1063/1.2927249

Effects of growth temperature on In N / Ga N nanodots grown by metal organic chemical vapor deposition

Wen-Hao Chang^*, Wen Cheng Ke, Shu Hung Yu, Lin Lee, Ching Yu Chen, Wen Che Tsai, Hsuan Lin, Wu-Ching Chou, Ming Chih Lee, Wei-Kuo Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650 °C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700 °C while retaining their optical quality.

Original language	English
Article number	104306
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Applied Physics
Volume	103
Issue number	10
DOIs	https://doi.org/10.1063/1.2927249
State	Published - 15 May 2008

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title = "Effects of growth temperature on In N / Ga N nanodots grown by metal organic chemical vapor deposition",

abstract = "InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650 °C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700 °C while retaining their optical quality.",

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T1 - Effects of growth temperature on In N / Ga N nanodots grown by metal organic chemical vapor deposition

AU - Chang, Wen-Hao

AU - Ke, Wen Cheng

AU - Yu, Shu Hung

AU - Lee, Lin

AU - Chen, Ching Yu

AU - Tsai, Wen Che

AU - Lin, Hsuan

AU - Chou, Wu-Ching

AU - Lee, Ming Chih

AU - Chen, Wei-Kuo

PY - 2008/5/15

Y1 - 2008/5/15

N2 - InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650 °C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700 °C while retaining their optical quality.

AB - InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650 °C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700 °C while retaining their optical quality.

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ER -

Effects of growth temperature on In N / Ga N nanodots grown by metal organic chemical vapor deposition

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