Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering

Bo Shiuan Shie; Horng-Chih Lin; Rong Jye Lyu; Tiao Yuan Huang

doi:10.1109/TPS.2014.2359992

Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering

Bo Shiuan Shie, Horng-Chih Lin, Rong Jye Lyu, Tiao Yuan Huang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O₂/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al₂O₃ as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> $10^{\mathrm {\mathbf {8}}}$), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm²/V $\cdot $ s) is obtained. The influences of O₂/Ar flow ratio are distinct for the devices with Al₂O₃ gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N₂ ambient.

Original language	American English
Article number	2359992
Pages (from-to)	3742-3747
Number of pages	6
Journal	IEEE Transactions on Plasma Science
Volume	42
Issue number	12
DOIs	https://doi.org/10.1109/TPS.2014.2359992
State	Published - 1 Dec 2014

Keywords

Film profile engineering (FPE)
InGaZnO (IGZO)
Thin-film transistors (TFTs)
metal oxide

Access to Document

10.1109/TPS.2014.2359992

Cite this

@article{c1b3af527608459a88db5948ba77ec66,

title = "Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering",

abstract = "In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> $10^{\mathrm {\mathbf {8}}}$), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm2/V $\cdot $ s) is obtained. The influences of O2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N2 ambient.",

keywords = "Film profile engineering (FPE), InGaZnO (IGZO), Thin-film transistors (TFTs), metal oxide",

author = "Shie, {Bo Shiuan} and Horng-Chih Lin and Lyu, {Rong Jye} and Huang, {Tiao Yuan}",

note = "Publisher Copyright: {\textcopyright} 1973-2012 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/TPS.2014.2359992",

language = "American English",

volume = "42",

pages = "3742--3747",

journal = "IEEE Transactions on Plasma Science",

issn = "0093-3813",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering

AU - Shie, Bo Shiuan

AU - Lin, Horng-Chih

AU - Lyu, Rong Jye

AU - Huang, Tiao Yuan

PY - 2014/12/1

Y1 - 2014/12/1

N2 - In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> $10^{\mathrm {\mathbf {8}}}$), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm2/V $\cdot $ s) is obtained. The influences of O2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N2 ambient.

AB - In this paper, high-performance InGaZnO (IGZO) thin-film transistors were fabricated with film-profile-engineering scheme. The impacts of gate dielectric, O2/Ar ratio during the sputtering of the IGZO, and annealing ambient on the device performance were investigated. It is found that the turn-ON voltage of the device is closely related to the gate dielectric material. For the devices with Al2O3 as the gate dielectric, decent performance in terms of high ON/OFF current ratio (> $10^{\mathrm {\mathbf {8}}}$), extremely steep subthreshold swing (62 mV/decade), and good mobility (19.8 cm2/V $\cdot $ s) is obtained. The influences of O2/Ar flow ratio are distinct for the devices with Al2O3 gate oxide. Significant improvement in the stability of the devices to the environment is achieved with the anneal done in a low-pressure N2 ambient.

KW - Film profile engineering (FPE)

KW - InGaZnO (IGZO)

KW - Thin-film transistors (TFTs)

KW - metal oxide

UR - http://www.scopus.com/inward/record.url?scp=84919484491&partnerID=8YFLogxK

U2 - 10.1109/TPS.2014.2359992

DO - 10.1109/TPS.2014.2359992

M3 - Article

AN - SCOPUS:84919484491

SN - 0093-3813

VL - 42

SP - 3742

EP - 3747

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 12

M1 - 2359992

ER -

Effects of gate dielectric and process treatments on the electrical characteristics of IGZO TFTs with film profile engineering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this