Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films

Ray-Hua Horng; D. S. Wuu; C. C. Leu; S. H. Chan; T. Y. Huang; S. M. Sze

doi:10.1016/S0026-2714(99)00315-7

Effects of fluorine-implanted treatment on Ba_0.7Sr_0.3TiO₃ films

Ray-Hua Horng^*, D. S. Wuu, C. C. Leu, S. H. Chan, T. Y. Huang, S. M. Sze

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of F-ion implantation on the leakage and dielectric properties of the Ba_0.7Sr_0.3TiO₃ (BST) films were investigated. The BST film implanted with 1 × 10¹⁵ cm^-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 10¹⁴ to 5 × 10¹⁵ cm^-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.

Original language	English
Pages (from-to)	667-670
Number of pages	4
Journal	Microelectronics Reliability
Volume	40
Issue number	4-5
DOIs	https://doi.org/10.1016/S0026-2714(99)00315-7
State	Published - 1 Apr 2000

Access to Document

10.1016/S0026-2714(99)00315-7

Cite this

@article{e1604789af9b4901933bbd8cd0e2d91b,

title = "Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films",

abstract = "The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 × 1015 cm-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 1014 to 5 × 1015 cm-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.",

author = "Ray-Hua Horng and Wuu, {D. S.} and Leu, {C. C.} and Chan, {S. H.} and Huang, {T. Y.} and Sze, {S. M.}",

year = "2000",

month = apr,

day = "1",

doi = "10.1016/S0026-2714(99)00315-7",

language = "English",

volume = "40",

pages = "667--670",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "4-5",

}

TY - JOUR

T1 - Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Leu, C. C.

AU - Chan, S. H.

AU - Huang, T. Y.

AU - Sze, S. M.

PY - 2000/4/1

Y1 - 2000/4/1

N2 - The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 × 1015 cm-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 1014 to 5 × 1015 cm-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.

AB - The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 × 1015 cm-2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 × 1014 to 5 × 1015 cm-2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties.

UR - http://www.scopus.com/inward/record.url?scp=0033742318&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(99)00315-7

DO - 10.1016/S0026-2714(99)00315-7

M3 - Article

AN - SCOPUS:0033742318

SN - 0026-2714

VL - 40

SP - 667

EP - 670

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4-5

ER -

Effects of fluorine-implanted treatment on Ba_0.7Sr_0.3TiO₃ films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this