Effects of excimer laser dopant activation on low temperature polysilicon thin-film transistors with lightly doped drains

Chang Ho Tseng, Ching Wei Lin, Ting Kuo Chang, Huang-Chung Cheng*, Albert Chin

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Scopus citations

    Abstract

    Excimer laser annealing has been utilized to manufacture low temperature polycrystalline silicon thin-film transistors with lightly doped drain (LDD) structures. The excimer laser annealing can effectively reduce the thermal budget of source/drain dopant activation, namely, without substrate heating. With the advantages of LDD structure, high performance device characteristics with a low "off" state current of 4.38 × 10-12 A/μm, high on/off current ratio of 1.6 × 107, and good field-effect mobility of 268 cm2/V s, can be achieved simultaneously.

    Original languageEnglish
    JournalElectrochemical and Solid-State Letters
    Volume4
    Issue number11
    DOIs
    StatePublished - 1 Nov 2001

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