Abstract
The effect of the depletion-region-width modulation has been included in the quasistatic large signal calculations of the Lo-Hi-Lo double-drift IMPATT diodes. In addition, a linear-generation-function model is introduced to give a comprehensive understanding of the phase advance and the power degradation effect of the diodes. The phase advance DELTA phi is derived versus of voltage modulation. The output power losses are also calculated as a function of voltage swing and compared with the uncorrected results. Efficiency as a function of avalanche-to-drift-voltage ratio V//a/V//d is obtained and V//a/V//d approximately equals 1. 0 is shown as the optimum condition for double drift Lo-Hi-Lo diodes at 50% modulation.
| Original language | English |
|---|---|
| Pages (from-to) | 13-26 |
| Number of pages | 14 |
| Journal | J Natl Chiao Tung Univ |
| Volume | 3 |
| State | Published - 1 Jan 1977 |