Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

W. J. Chang; C. C. Hsieh; Jenh-Yih Juang; Kaung-Hsiung Wu; T. M. Uen; Y. S. Gou; C. H. Hsu; Jiunn-Yuan Lin

doi:10.1063/1.1792808

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La_0.7Ce_0.3MnO₃ films

W. J. Chang^*, C. C. Hsieh, Jenh-Yih Juang, Kaung-Hsiung Wu, T. M. Uen, Y. S. Gou, C. H. Hsu, Jiunn-Yuan Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La _0.7Ce_0.3MnO₀ (LCeMO) on SrTiO₃ (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO₂ phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

Original language	English
Pages (from-to)	4357-4361
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.1792808
State	Published - 15 Oct 2004

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title = "Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films",

abstract = "Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.",

author = "Chang, {W. J.} and Hsieh, {C. C.} and Jenh-Yih Juang and Kaung-Hsiung Wu and Uen, {T. M.} and Gou, {Y. S.} and Hsu, {C. H.} and Jiunn-Yuan Lin",

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T1 - Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films

AU - Chang, W. J.

AU - Hsieh, C. C.

AU - Juang, Jenh-Yih

AU - Wu, Kaung-Hsiung

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Hsu, C. H.

AU - Lin, Jiunn-Yuan

PY - 2004/10/15

Y1 - 2004/10/15

N2 - Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

AB - Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.

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VL - 96

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La_0.7Ce_0.3MnO₃ films

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