Pulsed laser deposition was used for the preparation of single-phase electron-doped manganite thin films with nominal composition of La 0.7Ce0.3MnO0 (LCeMO) on SrTiO3 (100) substrates. In situ post deposition annealing was done to relax the possible epitaxial in-plane tensile strain between the film and the substrate. This leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. The result is indicative of a strong coupling between the electron and lattice degree of freedom.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - 15 Oct 2004|