TY - JOUR
T1 - Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
AU - Lee, Wei-I
AU - Huang, T. C.
AU - Guo, J. D.
AU - Feng, M. S.
PY - 1995/9/18
Y1 - 1995/9/18
N2 - Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa.
AB - Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa.
UR - http://www.scopus.com/inward/record.url?scp=21544481827&partnerID=8YFLogxK
U2 - 10.1063/1.115028
DO - 10.1063/1.115028
M3 - Article
AN - SCOPUS:21544481827
SN - 0003-6951
VL - 67
SP - 1721
EP - 1723
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
ER -