Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Yung Chun Wu; Ting Chang Chang; Po-Tsun Liu; Chi Shen Chen; Chun Hao Tu; Hsiao-Wen Zan; Ya-Hsiang Tai; Chun Yen Chang

doi:10.1109/TED.2005.856797

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Yung Chun Wu^*, Ting Chang Chang, Po-Tsun Liu, Chi Shen Chen, Chun Hao Tu, Hsiao-Wen Zan, Ya-Hsiang Tai, Chun Yen Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

Original language	English
Pages (from-to)	2343-2346
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TED.2005.856797
State	Published - Oct 2005

Keywords

Lightly doped drain (LDD)
Nanowire
Polysilicon
Thin-film transistor (TFT)

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10.1109/TED.2005.856797

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title = "Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels",

abstract = "This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.",

keywords = "Lightly doped drain (LDD), Nanowire, Polysilicon, Thin-film transistor (TFT)",

author = "Wu, {Yung Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Chen, {Chi Shen} and Tu, {Chun Hao} and Hsiao-Wen Zan and Ya-Hsiang Tai and Chang, {Chun Yen}",

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AU - Wu, Yung Chun

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Chen, Chi Shen

AU - Tu, Chun Hao

AU - Zan, Hsiao-Wen

AU - Tai, Ya-Hsiang

AU - Chang, Chun Yen

PY - 2005/10

Y1 - 2005/10

N2 - This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

AB - This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

KW - Lightly doped drain (LDD)

KW - Nanowire

KW - Polysilicon

KW - Thin-film transistor (TFT)

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EP - 2346

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Abstract

Keywords

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