Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

C. K. Lee; P. H. Yu; Y. J. Ye; P. W. Li; K. M. Chen; G. W. Huang; H. C. Lin

doi:10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

C. K. Lee, P. H. Yu, Y. J. Ye, P. W. Li, K. M. Chen, G. W. Huang, H. C. Lin^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771027
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

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10.1109/VLSI-TSA54299.2022.9771027

Cite this

Lee, C. K., Yu, P. H., Ye, Y. J., Li, P. W., Chen, K. M., Huang, G. W., & Lin, H. C. (2022). Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771027

Lee, C. K. ; Yu, P. H. ; Ye, Y. J. et al. / Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

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title = "Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels",

abstract = "The booming of IoT era has given rise to many revolutionary changes in our daily lives with new applications in family houses, healthcare, agriculture, and autonomous vehicles, just to name a few [1] [2]. In these emerging applications, various IoT communication protocols enable all of the connected objects to talk and interact. In this regard, Si-based RF technologies (e.g., bulk CMOS, SOI and SiGe HBT) are essential for the thriving IoT industry. However, it is difficult to co-integrate the Si-based RF components with IoT terminal products. To address these issues, exploitation of an appropriate fabrication scheme is needed.",

author = "Lee, {C. K.} and Yu, {P. H.} and Ye, {Y. J.} and Li, {P. W.} and Chen, {K. M.} and Huang, {G. W.} and Lin, {H. C.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771027",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, CK, Yu, PH, Ye, YJ, Li, PW, Chen, KM, Huang, GW & Lin, HC 2022, Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. / Lee, C. K.; Yu, P. H.; Ye, Y. J. et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Lee CK, Yu PH, Ye YJ, Li PW, Chen KM, Huang GW et al. Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771027

Effects of Channel Length on RF Performance of T-gate Poly-Si TFTs with Green Laser-Crystallized Channels

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