Effects of base oxide in HfSiO/SiO2 high-k gate stacks

W. H. Wu; M. C. Chen; M. F. Wang; Tuo-Hung Hou; L. G. Yao; Y. Jin; S. C. Chen; M. S. Liang

Effects of base oxide in HfSiO/SiO₂ high-k gate stacks

W. H. Wu^*, M. C. Chen, M. F. Wang, Tuo-Hung Hou, L. G. Yao, Y. Jin, S. C. Chen, M. S. Liang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Electrical characteristics of HfSiO/SiO₂ high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.

Original language	English
Pages	25-28
Number of pages	4
State	Published - 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	5/07/04 → 8/07/04

Cite this

@conference{a6ea9542172f4c2e9d91533f3dc386b1,

title = "Effects of base oxide in HfSiO/SiO2 high-k gate stacks",

abstract = "Electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.",

author = "Wu, {W. H.} and Chen, {M. C.} and Wang, {M. F.} and Tuo-Hung Hou and Yao, {L. G.} and Y. Jin and Chen, {S. C.} and Liang, {M. S.}",

year = "2004",

language = "English",

pages = "25--28",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

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TY - CONF

T1 - Effects of base oxide in HfSiO/SiO2 high-k gate stacks

AU - Wu, W. H.

AU - Chen, M. C.

AU - Wang, M. F.

AU - Hou, Tuo-Hung

AU - Yao, L. G.

AU - Jin, Y.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2004

Y1 - 2004

N2 - Electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.

AB - Electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.

UR - http://www.scopus.com/inward/record.url?scp=14844300098&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:14844300098

SP - 25

EP - 28

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Effects of base oxide in HfSiO/SiO₂ high-k gate stacks

Abstract

Conference

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