Effects of base oxide in HfSiO/SiO2 high-k gate stacks

W. H. Wu*, M. C. Chen, M. F. Wang, Tuo-Hung Hou, L. G. Yao, Y. Jin, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Electrical characteristics of HfSiO/SiO2 high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric breakdown of the gate stacks is determined by base oxide. In addition, base oxide thickness has a great impact on device performance and charge trapping, presumably due to remote Coulomb scattering (RCS) in the HfSiO bulk layer and direct tunneling through the base oxide. Threshold voltage instability induced by charge trapping will be a major reliability concern for Hf-based high-k gate dielectrics in the future.

Original languageEnglish
Pages25-28
Number of pages4
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/TerritoryTaiwan
Period5/07/048/07/04

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