Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Po Tsun Liu; Chih Hsiang Chang; Po Yi Kuo; Po Wen Chen

doi:10.1149/2.0221802jss

Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Po Tsun Liu^*, Chih Hsiang Chang, Po Yi Kuo, Po Wen Chen

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO₂ or Al₂O₃ film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO₂ passivation layer, abnormal negative threshold voltage (V_th) shifts were observed, while positive V_th shifts were observed in the TFTs with an Al₂O₃ passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO₂ passivation layer.

Original language	English
Pages (from-to)	Q17-Q20
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	3
DOIs	https://doi.org/10.1149/2.0221802jss
State	Published - Jan 2018

Access to Document

10.1149/2.0221802jss

Cite this

@article{8d7a0098a1334e4c82748d60c1b219a7,

title = "Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors",

abstract = "This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.",

author = "Liu, {Po Tsun} and Chang, {Chih Hsiang} and Kuo, {Po Yi} and Chen, {Po Wen}",

note = "Publisher Copyright: {\textcopyright} 2018 The Electrochemical Society.",

year = "2018",

month = jan,

doi = "10.1149/2.0221802jss",

language = "English",

volume = "7",

pages = "Q17--Q20",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "3",

}

TY - JOUR

T1 - Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

AU - Liu, Po Tsun

AU - Chang, Chih Hsiang

AU - Kuo, Po Yi

AU - Chen, Po Wen

PY - 2018/1

Y1 - 2018/1

N2 - This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.

AB - This study investigates the effects of positive gate-bias stress (PGBS) on the electrical instability of amorphous InWO/InGaZnO (a-IWO/IGZO) stacked thin-film transistors (TFTs) with a backchannel passivation layer of SiO2 or Al2O3 film. After the application of PGBS to a-IWO/IGZO TFTs with an SiO2 passivation layer, abnormal negative threshold voltage (Vth) shifts were observed, while positive Vth shifts were observed in the TFTs with an Al2O3 passivation layer. This unusual positive bias instability is explained using a two-step electrical degradation behavior model, including both electron trapping and moisture absorption at the damaged back channel interface between a-IWO/IGZO TFTs and the SiO2 passivation layer.

UR - http://www.scopus.com/inward/record.url?scp=85083916491&partnerID=8YFLogxK

U2 - 10.1149/2.0221802jss

DO - 10.1149/2.0221802jss

M3 - Article

AN - SCOPUS:85083916491

SN - 2162-8769

VL - 7

SP - Q17-Q20

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 3

ER -

Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this