EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.

Chih Tang Sah^*, Jach Yuan Chen Sun, Josheph Jeng Tao Tzou

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	753
Number of pages	1
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1982.190404
State	Published - 1982

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title = "EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.",

author = "Sah, {Chih Tang} and Sun, {Jach Yuan Chen} and Tzou, {Josheph Jeng Tao}",

year = "1982",

doi = "10.1109/iedm.1982.190404",

language = "English",

pages = "753",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.

AU - Sah, Chih Tang

AU - Sun, Jach Yuan Chen

AU - Tzou, Josheph Jeng Tao

PY - 1982

Y1 - 1982

UR - http://www.scopus.com/inward/record.url?scp=0020289055&partnerID=8YFLogxK

U2 - 10.1109/iedm.1982.190404

DO - 10.1109/iedm.1982.190404

M3 - Conference article

AN - SCOPUS:0020289055

SP - 753

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -