Original language | English |
---|---|
Pages (from-to) | 753 |
Number of pages | 1 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1982 |
EFFECTS OF AVALANCHE INJECTION CURRENTS ON THE ENDURANCE OF Si MOS DEVICES.
Chih Tang Sah*, Jach Yuan Chen Sun, Josheph Jeng Tao Tzou
*Corresponding author for this work
Research output: Contribution to journal › Conference article › peer-review
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