Effects of Ar/N2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

Hsiao-Wen Zan; Kuo Hsi Yen; Pu Kuan Liu; Kuo Hsin Ku; Chien Hsun Chen; Jennchang Hwang

doi:10.1143/JJAP.45.L1093

Effects of Ar/N₂ flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

Hsiao-Wen Zan^*, Kuo Hsi Yen, Pu Kuan Liu, Kuo Hsin Ku, Chien Hsun Chen, Jennchang Hwang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, we applied a low-temperature (150°C) alumina nitride (AlN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AlN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AlN dielectric greatly lowers the OTFT operating voltage (<5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (>10⁵) were also obtained for the AlN-OTFTs.

Original language	English
Pages (from-to)	L1093-L1096
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	37-41
DOIs	https://doi.org/10.1143/JJAP.45.L1093
State	Published - Oct 2006

Keywords

AIN
Dielectric
Low temperature
OTFT
Organic
Pentacene
Sputtering

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10.1143/JJAP.45.L1093

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title = "Effects of Ar/N2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors",

abstract = "In this work, we applied a low-temperature (150°C) alumina nitride (AlN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AlN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AlN dielectric greatly lowers the OTFT operating voltage (<5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (>105) were also obtained for the AlN-OTFTs.",

keywords = "AIN, Dielectric, Low temperature, OTFT, Organic, Pentacene, Sputtering",

author = "Hsiao-Wen Zan and Yen, {Kuo Hsi} and Liu, {Pu Kuan} and Ku, {Kuo Hsin} and Chen, {Chien Hsun} and Jennchang Hwang",

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T1 - Effects of Ar/N2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

AU - Zan, Hsiao-Wen

AU - Yen, Kuo Hsi

AU - Liu, Pu Kuan

AU - Ku, Kuo Hsin

AU - Chen, Chien Hsun

AU - Hwang, Jennchang

PY - 2006/10

Y1 - 2006/10

N2 - In this work, we applied a low-temperature (150°C) alumina nitride (AlN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AlN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AlN dielectric greatly lowers the OTFT operating voltage (<5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (>105) were also obtained for the AlN-OTFTs.

AB - In this work, we applied a low-temperature (150°C) alumina nitride (AlN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AlN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AlN dielectric greatly lowers the OTFT operating voltage (<5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (>105) were also obtained for the AlN-OTFTs.

KW - AIN

KW - Dielectric

KW - Low temperature

KW - OTFT

KW - Organic

KW - Pentacene

KW - Sputtering

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SP - L1093-L1096

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 37-41

ER -

Effects of Ar/N₂ flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors

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